technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044 , fax: +353 (0) 65 6822298 tel: 1 - 800 - 446 - 1158 / (978) 794 - 1666, fax: (978) 6890803 website: http://www.microsemi.com rf01001 rev a, june 201 0 hi gh rel iability product group page 1 of 4 devices msmcj5.0a thru msmcj170ca, e3 and msmcg5.0a thru msmcg170ca, e3 levels m, ma, mx, mxl features ? high reliability controlled devices with fabrication and assembly lot traceability ? 100 % surge tested devices ? optional u pscreening available by replacing the m prefix with ma, mx or mxl prefixes. these prefixes specify various screening and conformance inspection options based on mil - prf - 19500. refer to micro n ote 12 9 for more details on the screening options. ? axial - lead equivalent packages for thru - ho le mounting available as 1.5ke6.8a to 1.5ke200ca or 1n6267 thru 1n6303a and 1n5908 (consult factory for other surface mount options) . ? moisture classification is level 1 with no dry pack required per ipc/jedec j - std - 020b ? rohs compliant devices ava ilable by adding an e3 suffix ? 3 lot norm screening performed on standby current i d applications / benefits ? protection from switching transients and induced rf ? protection fro m esd and eft per iec 61000 - 4 - 2 and iec 61000 - 4 - 4 ? secondary lightening protection per iec 61000 - 4 - 5 with 42 ohms source impedance: o class 1: msmc5.0a to msmc170 ca o class 2: msmc5.0a to msmc150 ca o class 3: msmc5.0a to msmc 75 ca o class 4: msmc 5.0 a to msmc36 ca ? sec ondary lightening protection per iec 61000 - 4 - 5 with 1 2 ohms source impedance: o class 1: msmc5.0a to msmc 90 ca o class 2: msmc5.0a to msmc 45 ca o class 3: msmc5.0a to msmc 24 ca o class 4: msmc5.0a to msmc 11 ca ? secondary lightening protection per iec 61000 - 4 - 5 with 2 o hms source impedance: o class 2: msmc5.0a to msmc 22 ca o class 3: msmc5.0a to msmc 10 ca maximum ratings ? peak pulse power dissipation at 25 oc : 1500 watts at 10/1000 s (also see fig ures 1,2, and 3) with impulse repetition rate (duty factor) of 0.01 % or less ? t clamping (0 volts to v br min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional ? oper ating and storage temperature: - 65 oc to +150 oc ? thermal resistance: 20 oc/w junction to lead, or 80 o c/w junction to ambient when mounted on fr4 pc b oard (1oz cu) with recommended footprint (see page 2) ? steady - state power dissipation: 6 watts at tl = 30 oc , or 1.56 watts at ta = 25 oc when mounted on fr4 pc board with recommended footprint (see page 2) ? forward surge: 200 amps peak impulse of 8.3 ms hal f - sine wave at 25 oc (unidirectional only) ? solder temperatures: 260 oc for 10 s (maximum) surface mount 1500 watt transient voltage suppressor - high reliability controlled devices - unidirectional (a) and bidirectional (ca) construction - available in both j - bend and gull - wing terminations - selections for 5.0 to 170 v standoff voltages (v wm )
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044 , fax: +353 (0) 65 6822298 tel: 1 - 800 - 446 - 1158 / (978) 794 - 1666, fax: (978) 6890803 website: http://www.microsemi.com __ _____________________________________________________________________________________________________________________________ ____ rf01001 rev a, june 2010 hi gh rel iability product group page 2 of 4 mechanical and packaging ? void - free transfer molded thermoset ting epoxy body meeting ul94v - 0 ? gull - wing or j - bend tin - lead ( 90 % sn, 10 % pb) or rohs (100 % sn) co mpliant annealed matte - tin plating solderab le per mil - std - 750, method 2026 ? cathode indicated by band. no cathode band on bi - directional devices . ? part number marked on package ? available in bulk or custom tape - and - reel packaging ? tape - and - reel op tion availab le with up to 750 devices on 7 inch reel or up to 2500 devices on 13 inch reel per eia - 481 - 1 - a with 12 mm tape . add tr suffix to part number . ? weight: 0. 25 grams (approximate ly ) package dimensions pad layout dimensions in inches a b c d e f k l min .115 .26 0 .220 .305 .077 .380 .025 .030 max .121 .280 .245 .320 .104 .400 .040 .060 dimensions in millimeters min 2.92 6.60 5.59 7.75 1.95 9.65 0.635 .760 max 3.07 7.11 6.22 8.13 2.65 10.16 1.016 1.520 typical standoff height: 0.004 C 0.008 (0.1mm C 0.2mm ) inches mm a 0.390 9.90 b 0.110 2.79 c 0.150 3.81 sm c j (do - 214a b ) inches mm a 0.510 12.95 b 0.110 2.79 c 0.150 3.81 smcg (do - 215a b ) symbols & definitions symbol definition symbol definition v wm worki ng peak (standoff) voltage i pp peak pulse current p pp peak pulse power v c clamping voltage v br breakdown voltage i br breakdown current for v br i d standby current ( do - 214ab ) ( do - 215ab ) smcj smcg
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044 , fax: +353 (0) 65 6822298 tel: 1 - 800 - 446 - 1158 / (978) 794 - 1666, fax: (978) 6890803 website: http://www.microsemi.com __ _____________________________________________________________________________________________________________________________ ____ rf01001 rev a, june 2010 hi gh rel iability product group page 3 of 4 electrical characteristics @ 25 o c microsemi part number reverse stand - off volt age v wm breakdown voltage v br @ i br maximum clamping voltage v c @ i pp peak pulse current (see fig. 2) i pp maximum standby current i d @ v wm gull - wing j - bend v v ma v a ? a msmcg5.0a msmcg6.0a msmcj5.0a msmcj6.0a 5.0 6.0 6.40 C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C C note 1: for bidirectional device types indicate ca suffix after the part number. (i.e. msmcj170ca). bidirectional capacitance is half that shown in f igure 4 at zero volts. note 2: microsemi corps msmc series (1500 w) surface mountable packages are designed specifically for transient voltage
technical data sheet gort road business park, ennis, co. clare, ireland. 6 lake street, lawrence, ma 01841 tel: +353 (0) 65 6840044 , fax: +353 (0) 65 6822298 tel: 1 - 800 - 446 - 1158 / (978) 794 - 1666, fax: (978) 6890803 website: http://www.microsemi.com __ _____________________________________________________________________________________________________________________________ ____ rf01001 rev a, june 2010 hi gh rel iability product group page 4 of 4 graphs (wav eform C see figure 2) non - repetitive (p pp ) C peak pulse power - kw 100 10 1.0 0 tp C pulse time C sec figure 1 C peak pulse power vs. pulse time test waveform parameters tr = 10s, tp = 1000s figure 2 C puls e waveform capacitance in pf peak pulse power ( p pp ) or continuous power in percent of 25 o c rating t l lead temperature o c figure 3 C derating curve breakdown voltage in volts figure 4 C typical capacitance vs. breakdown 1s 10s 100s 1ms 10 ms
|
